Lateral transport through self-assembled InAs quantum dots located in the narrow gap electrodes

Lateral transport through self-assembled InAs quantum dots located in the narrow gap electrodes

Author(s):

Jung, S. K.

Publication title:

Semiconductor quantum dots : symposium held April 5-8, 1999, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

571

Pub. Year:

2000

Page(from):

209

Pub. info.:

Warrendale, PA: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558994782 [1558994785]

Language:

English

Call no.:

M23500/571

Type:

Conference Proceedings

Details

TDL ID:	ZA00019435
Series ID:	PA00000011
Conf. info. (Name):	Semiconductor Quantm Dots : Symposium
Conf. info. (Number):	1999
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1999.04.05-1999.04.08

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