Control of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering by changing NH3 flow rate during the growth of SiNx capping layer

Control of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering by changing NH3 flow rate during the growth of SiNx capping layer

Author(s):

Choi, W. J.

Publication title:

Infrared applications of semiconductors III : symposium held November 29-December 2, 1999, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

607

Pub. Year:

2000

Page(from):

515

Pub. info.:

Warrendale, Pa.: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995154 [1558995153]

Language:

English

Call no.:

M23500/607

Type:

Conference Proceedings

Details

TDL ID:	ZA00019432
Series ID:	PA00000011
Conf. info. (Name):	Infrared Applications of Semiconductors : Symposium
Conf. info. (Number):	3rd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1999.11.29-1999.12.02

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