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*Influence of SiOx capping layer quality on impurity-free interdiffusion in GaAs/AlGaAs quantum wells

Author(s):
Publication title:
Infrared applications of semiconductors III : symposium held November 29-December 2, 1999, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
607
Pub. Year:
2000
Page(from):
491
Pub. info.:
Warrendale, Pa.: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558995154 [1558995153]
Language:
English
Call no.:
M23500/607
Type:
Conference Proceedings

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