Blank Cover Image

Photoinduced changes in the charge states of native donors and acceptors in ZnGeP2

Author(s):
Stevens, K. T.
Setzler, S. D.
Schunemann, P. G.
Pollak, T. M.
Giles, N. C.
Halliburton, L. E.
1 more
Publication title:
Infrared applications of semiconductors III : symposium held November 29-December 2, 1999, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
607
Pub. Year:
2000
Page(from):
379
Pub. info.:
Warrendale, Pa.: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558995154 [1558995153]
Language:
English
Call no.:
M23500/607
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Photoluminescence and EPR of phosphorus vacancies in ZnGeP2

Moldovan, M., Stevens, K. T., Halliburton, L. E., Schunemann, P. G., Pollak, T. M., Setzler, S. D., Giles, N. C.

MRS-Materials Research Society
7 Conference Proceedings Optical and EPR Study of Defects in Cadmium Germanium Arsenide

Bai, Lihua, Garces, N.Y., Yang, Nanying, Schunemann, P.G., Setzler, S.D., Pollak, T.M., Halliburton, L.E., Giles, N.C.

Materials Research Society
2 Conference Proceedings Electron Paramagnetic Resonance and Photoluminescence Studies of Point Defects in Zinc Germanium Phosphide (ZnGeP2)

Setzler, S. D., Halliburton, L. E., Giles, N. C., Schunemann, P. G., Pollak, T. M.

MRS - Materials Research Society
8 Conference Proceedings Laser damage threshold of single crystal ZnGeP2 at 2.05 μm [5991-03]

Zawikski, K. T., Setzler, S. D., Schunemann, P. G., Pollak, T. M.

SPIE - The International Society of Optical Engineering
3 Conference Proceedings Electron-Nuclear Double Resonance Study of the Zinc Vacancy in Zinc Germanium Phosphide (ZnGeP2)

Stevens, K. T., Setzler, S. D., Halliburton, L. E., Fernelius, N. C., Schunemann, P. G., Pollak, T. M.

MRS - Materials Research Society
9 Conference Proceedings Assignment of infrared absorption bands in ZnGeP2

Giles, N.C., Bai, L., Garces, N.Y., Pollak, T.M., Schunemann, P.G.

SPIE - The International Society of Optical Engineering
4 Conference Proceedings Optical and magnetic resonance characterization of donors and acceptors in ZnGeP2

N.C. Giles, L.E. Halliburton, P.G. Schunemann

Society of Photo-optical Instrumentation Engineers
10 Conference Proceedings Temperature dependent hall measurements on CdGeAs2

Ptak, A. J., Jain, S., Stevens, K. T., Myers, T. H., Schunemann, P. G., Setzler, S. D., Pollak, T. M.

MRS-Materials Research Society
5 Conference Proceedings Persistent Photoinduced Changes in Charge States of Donors and Acceptors in Hydrothermally Grown ZnO

N. C. Giles, Yongquan Jiang, Xiaocheng Yang, S. M. Evans, L. E. Halliburton

Materials Research Society
11 Conference Proceedings TEMPERATURE AND POLARIZATION DEPENDENCE OF THE OPTICAL ABSORPTION IN ZnGeP2 AT TWO MICROMETERS

Shah, M., Ohmer, M. C., Fischer, D. W., Fernelius, N. C., Manasreh, M. O., Schunemann, P. G., Pollak, T. M.

MRS - Materials Research Society
6 Conference Proceedings Effect of donors and acceptors on the optical properties of CdGeAs2

Bai, L., Garces, N.Y., Xu, C., Halliburton, L.E., Giles, N.C., Schunemann, P.G., Nagashio, K., Yang, C., Feigelson, R.S.

SPIE - The International Society of Optical Engineering
12 Conference Proceedings Nonlinear absorption and laser damage threshold measurements of doped ZnGeP2

Guha,S., Bartsch,M., Hopkins,F.K., Eaton,M.P., Setzler,S.D., Schvnemann,P.G., Pollak,T.M., Sanders

SPIE - The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12