CHANGING PL INTENSITY FROM GaAs/Al0.3Ga0.7As HETEROSTRUCTURES DUE TO THE CHEMISORPTION OF SO2: EFFECTS OF HETEROSTRUCTURE GEOMETRY

CHANGING PL INTENSITY FROM GaAs/Al0.3Ga0.7As HETEROSTRUCTURES DUE TO THE CHEMISORPTION OF SO2: EFFECTS OF HETEROSTRUCTURE GEOMETRY

Author(s):

Publication title:

Interface control of electrical, chemical, and mechanical properties : symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

318

Pub. Year:

1994

Page(from):

225

Pub. info.:

Pittsburgh: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992177 [1558992170]

Language:

English

Call no.:

M23500/318

Type:

Conference Proceedings

Details

TDL ID:	ZA00019388
Series ID:	PA00000011
Conf. info. (Name):	Symposium on interface control of electrical, chemical, and mechanical properties
Conf. info. (Number):	1993
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1993.11.29-1993.12.03

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