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Chemical Stability of Advanced Metal Gate and Ultra-Thin Gate Dielectric Interface During Rapid Thermal Annealing

Author(s):
Publication title:
Rapid thermal and integrated processing VII : symposium held April 13-15, 1998, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
525
Pub. date:
1998
Page(from):
219
Pub. info.:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994317 [1558994319]
Language:
English
Call no.:
M23500/525
Type:
Conference Proceedings

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