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Evaluation and Comparison of 3.0nm Gate-Stack Dielectrics for Tenth-Micron Technology NMOSFETs

Author(s):
Yee, K. F.
Osburn, C. M.
Masnari, N. A.
Hauser, J. R.
Parker, C. G.
Lucovsky, G.
Henson, W. K.
Wortman, J. J.
Kippenberg, T.
Kuerschner, S.
5 more
Publication title:
Rapid thermal and integrated processing VII : symposium held April 13-15, 1998, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
525
Pub. date:
1998
Page(from):
157
Pub. info.:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994317 [1558994319]
Language:
English
Call no.:
M23500/525
Type:
Conference Proceedings

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