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Low-Temperature Photoluminescence Properties of In Situ Zn-Doped InP Layers Grown by LP-MOCVD

Author(s):
Publication title:
Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
442
Pub. Year:
1997
Page(from):
535
Pub. info.:
Pittsburgh, Penn: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993464 [1558993460]
Language:
English
Call no.:
M23500/442
Type:
Conference Proceedings

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