Influence of Donor, Acceptor, and Isovalent Impurity Doping on Arsenic Excess and Point Defects in Low-Temperature Grown GaAs

Influence of Donor, Acceptor, and Isovalent Impurity Doping on Arsenic Excess and Point Defects in Low-Temperature Grown GaAs

Author(s):

Chaldyshev, V. V.

Kunitsyn, A. E.

Faleev, N. N.

Preobrazhenskii, V. V.

Publication title:

Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

442

Pub. Year:

1997

Page(from):

491

Pub. info.:

Pittsburgh, Penn: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993464 [1558993460]

Language:

English

Call no.:

M23500/442

Type:

Conference Proceedings

Details

TDL ID:	ZA00019374
Series ID:	PA00000011
Conf. info. (Name):	Symposium on defects in electronic materials
Conf. info. (Number):	2nd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1996.12.02-1996.12.06

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