Blank Cover Image

Properties of InP Simultaneously Doped with Zinc and Sulfur Grown by MOCVD

Author(s):
Publication title:
Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
442
Pub. Year:
1997
Page(from):
441
Pub. info.:
Pittsburgh, Penn: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993464 [1558993460]
Language:
English
Call no.:
M23500/442
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings PROPERTIES OF MBE GROWN HETEROSTRUCTURES OF GaAs/InSb AND InP/InSb

Asom, M. T., Fitzgerald,m E. A., Thiel,. F. A., People, R,., Eaglesham. D., Luther, L., Sputz, S. K., Kimerling, L. C.

Materials Research Society
7 Conference Proceedings Heterojunction Fe:InP/InGaAs Schottky and MESFETs grown by MOCVD

S.C. Shei, Y.K. Su, C.J. Hwang, M. Yokoyama

Society of Photo-optical Instrumentation Engineers
2 Conference Proceedings Zinc Incorporation And Diffusion in InP During Ap-MOCVD Growth

Chu, S.N.G., Logan, R.A., Geva, M.

Electrochemical Society
8 Conference Proceedings UHV-Investigation on MOCVD-Grown InP(100) Surfaces

Visbeck, S., Hannappel, T., Vogt, P., Mahrt, J., Zorn, M., Knorr, K., Neges, M., Esser, N., Richter, W., Willig, F.

MRS - Materials Research Society
3 Conference Proceedings SEMI-INSULATING InP GROWN BY MOCVD

Feng, M. S., Wu, C. C., Lin, K. C., Chan, S. H., Chen, C. Y.

Materials Research Society
9 Conference Proceedings THE USE OF TETRAETHYLTIN AS AN N TYPE DOPANT SOURCE IN GaAs, AlGaAs AND AlAs FOR LASERS AND BRAGG REFLECTORS GROWN BY MOCVD

Pinzone, C. J., Neff, J. G., Chelakara, R. V., Fertitta, K., Dupuis, R. D.

MRS - Materials Research Society
4 Conference Proceedings GROWTH AND CHARACTERIZATION OF EXTREMELY ABRUPT InGaAs QUANTUM WELLS

Pinzone, C. J., Byrne, E. K., Sputz, S. K., People, R., Vandenberg, J., Chu, S. N. G.

MRS - Materials Research Society
10 Conference Proceedings Y-Doped HfO₂ Thin Films Grown by Injection MOCVD

K. Rasewel Buzin, F. Ducraquet, M. Rossell, J. Verbeeck, G. Van Tendeloo, B. Holloender, S. Rushworth, C. Dubourdieu

Electrochemical Society
5 Conference Proceedings Low-Temperature Photoluminescence Properties of In Situ Zn-Doped InP Layers Grown by LP-MOCVD

Moon, Y. B., Si, S. K., Yoon, E., Kim, S. J.

MRS - Materials Research Society
11 Conference Proceedings Erbium Doped GaAs by MOCVD

Greenwald, A. C., Linden, K. J., Rees, W. S., Jr., Just, O., Haegel, N. M., Donder, S.

MRS - Materials Research Society
6 Conference Proceedings CHARACTERISTICS OF DOPING AND DIFFUSION OF HEAVILY DOPED N AND P TYPE InP AND InGaAs EPITAXIAL LAYERS GROWN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION

Pinzone, C.J., Ha, N.T., Gerrard, N.D., Dupuis, R.D., Luftman, H.S.

Materials Research Society
12 Conference Proceedings SUSCEPTOR AND PROXIMITY RAPID THERMAL ANNEALING OF InP

Katz, A., Pearton, S. J., Geva, M.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12