Structural and Electrical Characterization of Si-Implanted TiN as a Diffusion Barrier for Cu Metallization

Structural and Electrical Characterization of Si-Implanted TiN as a Diffusion Barrier for Cu Metallization

Author(s):

Publication title:

Materials reliability in microelectronics V : symposium held April 17-21, 1995, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

391

Pub. Year:

1995

Page(from):

327

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992948 [1558992944]

Language:

English

Call no.:

M23500/391

Type:

Conference Proceedings

Details

TDL ID:	ZA00019370
Series ID:	PA00000011
Conf. info. (Name):	Symposium on materials reliability in microelectronics
Conf. info. (Number):	5th
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1995.04.17-1995.04.21

Similar Items:

1 Conference Proceedings Effect of Oxygen on the Degradation of Ti-Si-N Diffusion Barriers in Cu Metallization McArthur, W. F., Ring, K. M., Morgan, B., Hurst, Q., Serber, D., Clark, A., Kavanagh, K. L. MRS - Materials Research Society	7 Conference Proceedings PRE-ANNEALING OF TiN BARRIERS IN A1 METALLIZATION OF SILICON Sinke, W., Stout, P. K., Saris, F. W. Materials Research Society
2 Conference Proceedings Compositional Effects on the Degradation of PVD-TiSiN McArthur, W. F., Deng, F., Ring, K., Pattison, P. M., Kavanagh, K. L. MRS - Materials Research Society	8 Conference Proceedings Structural and Magnetic Characterization of Bi-Substituted Garnet on Si and GaAs Ring, Ken M., Shapiro, A. L., Deng, F., Goldman, R. S., Spada, F., Hellman, F., Cheeks, T. L., Kavanagh, K. L., Suzuki, … MRS - Materials Research Society
3 Conference Proceedings Compositional Effects on the Degradation of PVD-TiSiN McArthur, W. F., Deng, F., Ring, K., Pattison, P. M., Kavanagh, K. L. MRS - Materials Research Society	9 Conference Proceedings Electrical and Structural Characterization of Boron Implanted Silicon Following Laser Thermal Processing Jones, K.S., Gable, K.A., Law, M.E., Robertson, L.S., Talwar, S. Materials Research Society
4 Conference Proceedings ELECTRICAL CHARACTERIZATION OF ION IMPLANTED, THERMALLY ANNEALED TiN FILMS ACTING AS DIFFUSION BARRIERS ON SHALLOW JUNCTION SILICON DEVICES Armigliato, A., Finetti, M., Gabilli, E, Guerri, S., Ostoja, P., Sabato, G., Scorzoni, A. Materials Research Society	10 Conference Proceedings 16 Electrical characterization of silicon diodes formed by laser annealing of implanted dopants Nanver, L. K., Slabbekoorn, J., Burtsev, A., Scholtes, T.L.M., Surdeanu, R., Simon, F., Kalhert, H.-J., Slotboom, J. W. Electrochemical Society
5 Conference Proceedings Process integration of TDEAT-based MOCVD TiN as diffusion barrier for advanced Metallization Gn,F.H., Li,Q., Chan,L., Chooi,S.Y.M. SPIE-The International Society for Optical Engineering	11 Conference Proceedings STRUCTURAL AND ELECTRICAL PROPERTIES OF TIN AND CARBON CO-IMPLANTED SILICON Mei, P., Schmidt, M.T., Li, P.W., Yang, E.S., Wilkens, B.J. Materials Research Society
6 Conference Proceedings Silver Metallization With Reactively Sputtered TiN Diffusion Barrier Films Gao, L., Gstottner, J., Emling, R., Linsmeier, Ch., Balden, M., Wiltner, A., Hansch, W., Schmitt-Landsiedel, D. Materials Research Society	12 Conference Proceedings CHARACTERIZATION OF TiN DIFFUSION BARRIER FOR SUBMICRON TECHNOLOGY Dixit, G. A., Che, F. S., Zhang, H., Yao., G.D., Wei, C. C., Liou, F. T. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12