SUPPRESSION OF SELF-INTERSTITIALS IN SILICON DURING ION IMPLANTATION VIA IN-SITU PHOTOEXCITATION

SUPPRESSION OF SELF-INTERSTITIALS IN SILICON DURING ION IMPLANTATION VIA IN-SITU PHOTOEXCITATION

Author(s):

Ravi, J.

Publication title:

Microstructure of irradiated materials : Symposium held November 29-1 December, 1994, Boston, Massachusetts USA

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

373

Pub. Year:

1995

Page(from):

475

Pub. info.:

Pittsburgh, Pa: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992757 [1558992758]

Language:

English

Call no.:

M23500/373

Type:

Conference Proceedings

Details

TDL ID:	ZA00019369
Series ID:	PA00000011
Conf. info. (Name):	Symposium on microstructure of irradiated materials
Conf. info. (Number):	1994
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1994.11.29-1994.12.01

Similar Items:

1 Conference Proceedings Charge-State Defect Engineering of Silicon During Ion Implantation Brown, R. A., Ravi, J., Erokhin, Y., Rozgonyi, G. A., White, C. W. MRS - Materials Research Society	7 Conference Proceedings STABILITY OF NANCOSCALE COBALT SILICDE FILM FORMATION ON POLYSILICON Pramanick, S., Erokhin, Yu N., Patnaik, B. K., Rozgonyi, G.A., Gambino, J. P. Materials Research Society
2 Conference Proceedings Charge State Defect Engineering of Silicon During Ion Implantation Brown, R. A., Ravi, J., Erokhin, Y., Rozgonyi, G. A., White, C. W. MRS - Materials Research Society	8 Conference Proceedings Electrical and Structural Properties of MeV Si+ Ion Implantation in Silicon Agarwal, Aditya, Koveshnikov, S., Christensen, K., Rozgonyi, G. A. MRS - Materials Research Society
3 Conference Proceedings THE INFLUENCE OF AN IN-SITU ELECTRIC FIELD ON H+ AND He+ IMPLANTATION INDUCED DEFECTS IN SILICON Ravi, J., Erokhin, Yu., Koveshnikov, S., Rozgonyi, G. A., White, C. W. MRS - Materials Research Society	9 Conference Proceedings TEMPERATURE DEPENDENT AMORPHIZATION OF SILICON DURING SELF IMPLANTATION Maszara, W.P., Rozgonyi, G.A., Simpson, L., Wortman, J.J. Materials Research Society
4 Conference Proceedings THIN Ni SILICIDE FORMATION BY LOW TEMPERATURE-INDUCED METAL ATOM REACTION WITH ION IMPLANTED AMORPHOUS SILICON Erokhin, Yu.N., Patnaik, B.K., Pramanick, S., Hong, F., White, C.W., Rozgonyi, G.A. Materials Research Society	10 Conference Proceedings EFFECTS OF CONCURRENT Co OR Ti SILICIDATION ON TRANSIENT DIFFUSION AND END-OF-RANGE DAMAGE IN PHOSPHORUS IMPLANTED SILICON Honeycutt, J. W., Ravi, J., Rozgonyi, G. A. Materials Research Society
5 Conference Proceedings In Situ Photoexcitation-Induced Suppression of Point Defect Generation in Ion Implanted Silicon Cho, C. R., Yarykin, N., Rozgonyi, G. A., Zuhr, R. A. MRS - Materials Research Society	11 Conference Proceedings AGGLOMERATION-FREE NANOSCALE COBALT SILICIDE FILM FORMATION VIA SUBSTRATE PREAMORPHIZATION Pramanick, S., Patnaik, B. K., Rozgonyi, G. A. MRS - Materials Research Society
6 Conference Proceedings Photoexcitation Induced Suppression of Point Defect Formation during Ion Implantation in Silicon Cho, C.R., Yarykin, N., Rozgonyi, G.A., Zuhr, R.A. Electrochemical Society	12 Conference Proceedings Doping of Silicon Carbide by Ion Implantation Svensson, B.G., Hallen, A., Linnarsson, M.K., Kuznetsov, A.Yu., Janson, M.S, Aberg, D., Oesterman, J., Persson, P.O.A., … Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12