PROPERTIES OF InxGa1-xAs CRYSTALS GROWN BY LPEE ON PATTERNED GaAs SUBSTRATES

PROPERTIES OF InxGa1-xAs CRYSTALS GROWN BY LPEE ON PATTERNED GaAs SUBSTRATES

Author(s):

Publication title:

Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

340

Pub. Year:

1994

Page(from):

367

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992405 [1558992405]

Language:

English

Call no.:

M23500/340

Type:

Conference Proceedings

Details

TDL ID:	ZA00019366
Series ID:	PA00000011
Conf. info. (Name):	Symposium on compound semiconductor epitaxy
Conf. info. (Number):	1994
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1994.04.04-1994.04.07

Similar Items:

1 Conference Proceedings High-Quality InxGa1-xAs Heterostructures Grown on GaAs With MOVPE Bulsara, M. T., Fitzgerald, E. A. MRS - Materials Research Society	7 Conference Proceedings 20um Cutoff Long-Wavelength InxGa1-xAs/GaAs Quantum-Well Infrared Photodetectors Guanapala, S.D., Bandara, K.M.S.V., Levine, B.F., Sivco, D. L., Cho, A.Y., Park, J. S., Lin, T.L., Liu, J.K., Pike, W. … Electrochemical Society
2 Conference Proceedings INFLUENCE OF GROWTH PARAMETERS ON THE PROPERTIES OF InxGa1-xAs GROWN ON GaAs BY OMVPE Dyk, E. Ernest Van, Leitch, Andrew W. R., Ehlers, Hendrik L. MRS - Materials Research Society	8 Conference Proceedings X-ray analysis of strain relaxation in multilayer systems InxGa1-xAS1-yNy/GaAs Pessa, M., Pavelescu, E.-M., Fodchuk, I. M., Gevyk, V. B., Shpak, A. P., Molodkin, V. B., Kislovskii, E. N., … SPIE - The International Society of Optical Engineering
3 Conference Proceedings Relaxed InxGa1-xAs Graded Buffers Grown With Organometallic Vapor-Phase Epitaxy on GaAs Bulsara, M. T., Leitz, C., Fitzgerald, E. A. MRS - Materials Research Society	9 Conference Proceedings ELECTRIC FIELD EFFECTS ON THE OPTICAL PROPERTIES OF InxGa1-xAs/GaAs STRAINED QUANTUM WELLS AND SUPERLATTICES Gibb, K., Lacelle, C., Roth, A.P., Soucail, B., Dupuis, N., Voisin, P., Hua, B.Y., Fortin, E. Materials Research Society
4 Conference Proceedings Cathodoluminescence from InxGa1-xAs layers grown on GaAs using a transmission electron microscope Yamamoto, N., Mita, T., Heun, S., Franciosi, A., Bonard, J-M. MRS-Materials Research Society	10 Conference Proceedings Role of InxGa1-xAs strain relaxation layers in optical and structural properties of InAs/GaAs quantum dots Song, J.D., Park, Y.M., Lim, J.G., Shin, J.C., Park, Y.J., Choi, W.J., Han, I.-K., Cho, W.-J., Lee, J.I. SPIE - The International Society of Optical Engineering
5 Conference Proceedings GROWTH OF GaAs, InxGa1-xAs, AND AlxGa1-xAs ON GaAs(111)B SUBSTRATES BY MOLECULAR BEAM EPITAXY Yang,K., Schowalter, L. J., Laurich, B. K., Smith, D. L. Materials Research Society	11 Conference Proceedings INTERFACIAL MICROSTRUCTURES IN InXGa1-Xas/GaAs STRAINED-LAYER STRUCTURES Yao, J. Y., Anderson, T. G., Dunlop, G. L. Materials Research Society
6 Conference Proceedings THREADING DISLOCATIONS IN InxGa1-xAs/GaAs SYSTEM Tamura, M., Hashimoto, A., Nakatsugawa, Y. Materials Research Society	12 Conference Proceedings Misfit Dislocations in InxGa1-xAs/GaAs Heterostructures near the Critical Thickness Cockayne H. J. D., Orders P., Sikorski A., Usher B., Zhou J. Plenum Press

1

2

3

4

5

6

7

8

9

10

11

12