THE CHARACTERISTICS OF THE LATERAL THICKNESS MODULATION IN STRAINED LAYER GaxIn1-xAs MULTIPLE QUANTUM WELL STRUCTURES GROWN BY MOVPE

THE CHARACTERISTICS OF THE LATERAL THICKNESS MODULATION IN STRAINED LAYER GaxIn1-xAs MULTIPLE QUANTUM WELL STRUCTURES GROWN BY MOVPE

Author(s):

Publication title:

Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

340

Pub. Year:

1994

Page(from):

337

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992405 [1558992405]

Language:

English

Call no.:

M23500/340

Type:

Conference Proceedings

Details

TDL ID:	ZA00019366
Series ID:	PA00000011
Conf. info. (Name):	Symposium on compound semiconductor epitaxy
Conf. info. (Number):	1994
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1994.04.04-1994.04.07

Similar Items:

1 Conference Proceedings Thickness and composition determination of MBE-grown strained multiple quantum well structures by x-ray diffraction Usher,B.F., Zhou,D. SPIE-The International Society for Optical Engineering	7 Conference Proceedings Separate electron-hole confinement in composite InAsyP1-y/GaxIn1-xAs quantum wells Silov, A.Yu., Aneeshkumar, B.N., Leys, M.R., Averkiev, N.S., Christianen, P.C.M., Wolter, J.H. SPIE-The International Society for Optical Engineering
2 Conference Proceedings ELECTRIC-FIELD DEPENDENCE OF ELECTROREFLECTANCE AND PHOTO-CURRENT SPECTRA AT VISIBLE WAVELENGTHS IN MOVPE-GROWN InAlGaP MULTIPLE STRAINED QUANTUM-WELL … Fritz, I. J., Blum, O., Schneider, R. P., Jr., Howard, A. J., Follstaedt, D. M. MRS - Materials Research Society	8 Conference Proceedings InGaAlAs/InAlAs multiple quantum well structures grown by molecular beam epitaxy for tong-wavelength infrared detection Zhang,D.H., Zhang,W.M., Zhang,P.H., Osotchan,T., Yoon,S.F., Shi,X., Liu,R., Wee,T.S. SPIE - The International Society for Optical Engineering
3 Conference Proceedings BAND OFFSETS OF InAsxP1-x/InP STRAINED LAYER QUANTUM WELLS GROWN BY LP-MOVPE USING TBAs Beaudoin, M., Masut, R. A., Isnard, L., Desjardins, P., Bensaada, A., L'Esperance, G., Leonelli, R. MRS - Materials Research Society	9 Conference Proceedings GaN/AlN multiple quantum well structures grown by MBE on GaN templates for 1.55 μm intersubband absorption T. Aggerstam, T. G. Andersson, P. Holmstrom, P. Janes, X. Y. Liu, S. Lourdudoss, L. Thylen SPIE - The International Society of Optical Engineering
4 Conference Proceedings Optical properties of strained layer quantum well structures Sahu,T., Vaya,P.R. SPIE-The International Society for Optical Engineering	10 Conference Proceedings PROPERTIES OF HgTe:ZnTe STRAINED LAYER SUPERLATTICES GROWN BY MOVPE Mullins, J.T., Clifton, P.A., Brown, P.D., Hall, D.O., Brinkman, A.W. Materials Research Society
5 Conference Proceedings Growth and characterization of GaxIn1-xAs1-ySby epitaxial layers grown by LP-MOCVD [6029-38] Wang J., Wang Y., Wang T., Yang S., Li X., Yin J., Sai X., Gao H. SPIE - The International Society of Optical Engineering	11 Conference Proceedings GaxIn1-xAsyP 1-y Quantum Wire Heterostractures Formed by Strained-Induced Lateral-Layer Ordering Process Cheng, K.Y. Electrochemical Society
6 Conference Proceedings High Quality In1-x(Gax)AsyP1-y/InP Compressive Strained Quantum Well Structures Grown by LP-MOCVD Zhu, J. T., Clawson, A. R., Yu, P. K. L. MRS - Materials Research Society	12 Conference Proceedings MODULATOR STRUCTURE USING In(As,P)/InP STRAINED MULTIPLE QUANTUM WELLS GROWN BY GAS-SOURCE MBE Hou, H. Q., Chin, T. P., Liang, B. W., Tu, C. W. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12