FERMI LEVEL PINNING IN Au SCHOTTKY BARRIERS ON InGaP AND InGaAlP | 東京工業大学附属図書館文献データベース

Blank Cover Image

FERMI LEVEL PINNING IN Au SCHOTTKY BARRIERS ON InGaP AND InGaAlP

Author(s):

Gorbylev, V. A.

Chekalin, A. A.

Polyakov, A. Y.

Govorkov, A. V.

Leiferov, B. M.

Balmashnov, A. A.

Publication title:

Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

340

Pub. Year:

1994

Page(from):

265

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992405 [1558992405]

Language:

English

Call no.:

M23500/340

Type:

Conference Proceedings

Details

TDL ID:	ZA00019366
Series ID:	PA00000011
Conf. info. (Name):	Symposium on compound semiconductor epitaxy
Conf. info. (Number):	1994
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1994.04.04-1994.04.07

Similar Items:

1 Conference Proceedings DOPING EFFICIENCY AND DEEP TRAPS IN MOCVD-GROWN InGaAlP AS INFLUENCED BY STOICHI0METRY AND HYDROGEN PASSIVATION Gorbylev, V. A., Chelniy, A. A., Chekalin, A. A., Polyakov, A. Y., Pearton, S. J., Smirnov, N. B., Govorkov, A. V., … MRS - Materials Research Society	7 Conference Proceedings Lateral AlxGal-xN Power Rectifiers with 9.7 kV Reverse Breakdown Voltage Zhang, A.P., Johnson, J.W., Ren, F., Han, J., Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., Redwing, J.M., Lee, K.P., … Electrochemical Society
2 Conference Proceedings Deep Levels in High Resistivity AlGaN Films Grown by MOCVD Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Redwing, J. M. MRS - Materials Research Society	8 Conference Proceedings Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes Luo, B., Kim, J., Mehandru, R., Ren, F., Lee, K.P., Pearton, S.J., Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., … Materials Research Society
3 Conference Proceedings Persistent Photoconductivity in AlGaN Films Grown by MOCVD Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Redwing, J. M. MRS - Materials Research Society	9 Conference Proceedings Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes Luo, B., Kim, J., Mehandru, R., Ren, F., Lee, K.P., Pearton, S.J., Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., … Materials Research Society
4 Conference Proceedings Barrier Height and Fermi Level Pinning at Schottky Interfaces Patel,K.D., Modi,B.P., Srivastava,R. Narosa Publishing House	10 Conference Proceedings Ultravlolet photodetectors based on GaN and AlxGa1-xN epitaxial layers Shmidt,N.M., Lundin,W.V., Sakharov,A.V., Usikov,A.S., Zavarin,E.E., Govorkov,A.V., Polyakov,A.Ya., Smirnov,N.B. SPIE-The International Society for Optical Engineering
5 Conference Proceedings Fermi Level Pinning and Schottky Barrier Characteristics on Reactively Ion Etched 4H-SiC Skromme, B. J., Luckowski, E., Moore, K., Clemens, S., Resnick, D., Gehoski, T., Ganser, D. Trans Tech Publications	11 Conference Proceedings Studies of Electrically and Recombination Active Centers in Undoped GaN Grown by OMVPE Polyakov, A. Y., Govorkov, A. V., Smirnov, N. B., Shin, M., Skowronski, M., Greve, D. W. MRS - Materials Research Society
6 Conference Proceedings Electrical Properties of GaN/InGaN MQW Heterojunction Diodes as Affected by Various Plasma Treatments Kim, J., Luo, B., Mehandru, R., Ren, F., Lee, K.P., Pearton, S.J., Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., … Materials Research Society	12 Conference Proceedings GaN 20-mm diameter ingots grown from melt-solution by seeded technique Sukhoveyev, V. A., Ivantsov, V. A., Nikitina, I. P., Babanin, A. I., Polyakov, A. Y., Govorkov, A. V., Smirnov, N. B., … MRS-Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12