NOVEL GROUP V SOURCES FOR USE IN MOMBE

NOVEL GROUP V SOURCES FOR USE IN MOMBE

Author(s):

Publication title:

Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

340

Pub. Year:

1994

Page(from):

161

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992405 [1558992405]

Language:

English

Call no.:

M23500/340

Type:

Conference Proceedings

Details

TDL ID:	ZA00019366
Series ID:	PA00000011
Conf. info. (Name):	Symposium on compound semiconductor epitaxy
Conf. info. (Number):	1994
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1994.04.04-1994.04.07

Similar Items:

1 Conference Proceedings GROWTH OF GaAs AND AlGaAs BY MOMBE USING PHENYLARSINE Abernathy, C. R., Wisk, P., Pearton, S. J., Ren, F., Bohling, D. A., Muhr, G. T. Materials Research Society	7 Conference Proceedings COMPARISON OF DISILANE AND TETRAETHYLTIN AS GASEOUS DOPANTS FOR GROWTH OF n-GaAs AND n-AlGaAs BY MOMBE Wisk, P., Abernathy, C. R., Pearton, S. J., Ren, F., Fullowan, T., Lothian, J. Materials Research Society
2 Conference Proceedings THE INCORPORATION AND BEHAVIOR OF OXYGEN IN AlGaAs GROWN BY MOMBE USING TRIMETHYLAMINE ALANE Abernathy, C.R., Song, J., Hobson, W.S., Pearton, S.J., Ren, F., Bohling, D.A., Muhr, G.T. Materials Research Society	8 Conference Proceedings Effect of low temperature growth on impurity and defect incorporation in AlGaAs grown by MOMBE Abernathy,C.R., Pearton,S.J., Bohling,D.A. Trans Tech Publications
3 Conference Proceedings GROWTH AND DOPING OF AlAs BY MOMBE Abernathy, C. R., Pearton, S. J., Wisk, P. W., Hobson, W. S., Ren, F. MRS - Materials Research Society	9 Conference Proceedings GAS PHASE AND SURFACE RECTIONS OF ORGANOMETALLIC ARSENIC SOURCES Omstead, T. R., Brandon, S., Hoveland, M,, Jensen, K. F., Bohling, D. A., Muhr, G. T. Materials Research Society
4 Conference Proceedings *LOW TEMPERATURE GROWTH OF GaAs AND AlGaAs BY MOMBE Abernathy, C. R., Bohling, D. A., Jones, A. C. Materials Research Society	10 Conference Proceedings The Role of the In Source in InN Growth From Molecular Beams Donovan, S. M., Gila, B., MacKenzie, J. D., Lee, K. N., Abernathy, C. R., Wilson, R. G., Muhr, G. T. MRS - Materials Research Society
5 Conference Proceedings Deposition of TiN by electron cyclotron resonance-metal organic molecular beam epitaxy Wisk, P. W., Abernathy, C. R., Pearton, S. J., Ren, F., Katz, A., Bohling, D. A. MRS - Materials Research Society	11 Conference Proceedings Comparison of the optical properties of Er3+ doped gallium nitride prepared by metalorganic molecular beam epitaxy (MOMBE) and solid source molecular beam … Hommerich, U. H., Seo, J. T., MacKenzie, J. D., Abernathy, C. R., Birkhahn, R., Steckl, A. J., Zavada, J. M. MRS-Materials Research Society
6 Conference Proceedings InGaP/GaAs BASED SINGLE AND DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS GROWN BY MOMBE Ren, F., Abernathy, C.R., Pearton, S.J., Wisk, P.W., Esagui, R. Materials Research Society	12 Conference Proceedings Doping sources for growth of group III-nitrides Abernathy, C.R., Groshens, T. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12