Epitaxial SiGeC photodiode grown on Si substrate with response in the 1.3-to 1.55-ｦﾌm wavelength range

Epitaxial SiGeC photodiode grown on Si substrate with response in the 1.3-to 1.55-ｦﾌm wavelength range

Author(s):

Huang,F.F.Y. ( Univ.of California/Los Angeles )
Chu,M.
Wang,K.L.
Trinh,P.D.
Jalali,B.

Publication title:

Silicon-Based Monolithic and Hybrid Optoelectronic Devices

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3007

Pub. Year:

1997

Page(from):

68

Page(to):

73

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819424181 [0819424188]

Language:

English

Call no.:

P63600/3007

Type:

Conference Proceedings

Details

TDL ID:	ZA00019359
Series ID:	PA00000029
Conf. info. (Name):	Photonics West : Silicon-Based Monolithic and Hybrid Optoelectronic Device
Conf. info. (Number):	1997
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	1997.02.13

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