Blank Cover Image

High-power InAsSb/InAsSbP laser diodes emitting at 3-to 5-ｦﾌm range

Author(s):
Razeghi,M. ( Northwestern Univ. )
Diaz,J.
Yi,H.J.
Wu,D.
Lane,B.
Rybaltowski,A.
Xiao,Y.H.
Jeon,H.
3 more
Publication title:
Integrated Optics Devices: Potential for Commercialization
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
2997
Pub. Year:
1997
Page(from):
14
Page(to):
24
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819424082 [0819424080]
Language:
English
Call no.:
P63600/2997
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings High-Power InAsSb/InAsSbP Laser Diodes Emitting at 3｡ﾁ5 ｦﾌm Range

Razeghi, M., Diaz, J., Yi, H-J., Wu, D., Lane, B., Rybaltowski, A., Xiao, Y., Jeon, H.

MRS - Materials Research Society
7 Conference Proceedings InAsSb-based midinfrared lasers(3.5 to 3.9 ｦﾌm)and light-emitting diodes with AlAsSb claddings and semimetal electron injection grown by metal-organic …

Allerman,A.A., Biefeld,R.M., Kurtz,S.R.

SPIE-The International Society for Optical Engineering
2 Conference Proceedings InAsSb/InAlAsSb Quantum-Well Diode Lasers Emitting Between 3 and 4 ｦﾌm

Turner, G. W., Choi, H. K., Manfra, M. J., Connors, M. K.

MRS - Materials Research Society
8 Conference Proceedings 980-nm GaInAs/GaAsIGaInP QW high-power lasers

Wang,L., Wu,S., Liu,Y., Ning,Y., Diaz,J., Eliashevich,I., Yi,H.J., Razeghi,M.

SPIE-The International Society for Optical Engineering
3 Conference Proceedings InAsSb/InAIAsSb quantum well diode lasers emitting beyond 3 ｦﾌm

Choi,H.K., Turner,G.W., Manfra,M.J., Connors,M.K., Herrmann,F.P., Baliga,A., Anderson,N.G.

SPIE-The International Society for Optical Engineering
9 Conference Proceedings Sb-based infrared materials and photodetectors for the 3-to 5-and 8-to 12-ｦﾌm range

Michel,E.J., Kim,J.D., Park,S., Xu,J., Ferguson,I.T., Razeghi,M.

SPIE-The International Society for Optical Engineering
4 Conference Proceedings Demonstration of InAsSb/AlInSb double-heterostructure detectors for room temperature operation in the 5- to 8-ｦﾌm wavelength range

Wojkowski,J.S., Mohseni,H., Kim,J.D., Razeghi,M.

SPIE - The International Society for Optical Engineering
10 Conference Proceedings High-temperature W diode lasers emitting at 3.3ｦﾌm

Olafsen, L. J., Bewley, W. W., Vurgaftman, I., Felix, C. L., Aifer, E. H., Stokes, D. W., Meyer, J. R., Lee, H., Menna, …

MRS-Materials Research Society
5 Conference Proceedings Continuous-wave room-temperature operation of InGaN/GaN multiquantum well lasers grown by low-pressure metalorganic chemical vapor deposition (Invited Paper)

Razeghi,M., Saxler,A., Kung,P., Walker,D., Zhang,X., Rybaltowski,A., Xiao,Y., Yi,H.J., Diaz,J.

SPIE-The International Society for Optical Engineering
11 Conference Proceedings Operating characteristics of Al-free InGaAsP/GaAs single quantum well high-power laser

Wang,L.J., Wu,S.L., Diaz,J., Eliashevich,I., Yi,H.J., Razeghi,M.

SPIE-The International Society for Optical Engineering
6 Conference Proceedings Growth and Characterization of BRS GaInAsP-GaAs Laser Emitting at 0.8ｦﾌm by Gas-Source Molecular Beam Epitaxy

Jelen, C., Slivken, S., Diaz, J., Erdtmann, M., Kim, S., Wu, D., Razeghi, M.

MRS - Materials Research Society
12 Conference Proceedings Toward quantum dot laser diodes emitting at 1.5 ｦﾌm

Fafard,S., McCaffrey,J., Feng,Y., Allen,C.Ni., Marchand,H., Isnard,L., Desjardins,P., Guillon,S., Masut,R.A.

SPIE - The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12