High-power 980-nm strained InGaAs/AlGaAs/GaAs quantum well laser

High-power 980-nm strained InGaAs/AlGaAs/GaAs quantum well laser

Author(s):

Hua,J. ( Hebei Semiconductor Research Institute )
Guan,X.

Publication title:

Semiconductor Lasers II

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

2886

Pub. Year:

1996

Page(from):

328

Page(to):

334

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819422873 [0819422878]

Language:

English

Call no.:

P63600/2886

Type:

Conference Proceedings

Details

TDL ID:	ZA00019347
Series ID:	PA00000029
Conf. info. (Name):	Photonics China : Semiconductor Lasers
Conf. info. (Number):	1996 : 2nd
Conf. info. (Venue):	Beijing, China
Conf. info. (Date):	1996.11.06-1996.11.07

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