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Experimental investigation of the doping profile and structure of InGaAsP/InP multiple quantum wells after rapid thermal annealing

Author(s):
Publication title:
Semiconductor Lasers II
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
2886
Pub. Year:
1996
Page(from):
264
Page(to):
267
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819422873 [0819422878]
Language:
English
Call no.:
P63600/2886
Type:
Conference Proceedings

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