Degradation of thin SiO2 sidewall spacers during the selective epitaxial growth for the fabrication of raised source/drain MOSFETs

Degradation of thin SiO2 sidewall spacers during the selective epitaxial growth for the fabrication of raised source/drain MOSFETs

Author(s):

Unnikrishnan,S. ( Univ.of Texas/Austin )

Publication title:

Microelectronic Manufacturing Yield, Reliability, and Failure Analysis

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

2635

Pub. Year:

1995

Page(from):

246

Page(to):

255

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819420015 [0819420018]

Language:

English

Call no.:

P63600/2635

Type:

Conference Proceedings

Details

TDL ID:	ZA00019322
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Microelectronic Manufacturing : Microelectronic Manufacturing Yield,Reliability, and Failure Analysis
Conf. info. (Number):	1995
Conf. info. (Venue):	Austin, TX, USA
Conf. info. (Date):	1995.10.25-1995.10.26

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