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Electroluminescence of 111-nitride double heterostructure light emitting diodes with silicon and magnesium doped InGaN

Author(s):
Saxler,A.
Kim,K.S.
Walker,D.
Kung,P.
Zhang,X.
Brown,G.J.
Mitchel,W.C.
Razeghi,M.
3 more
Publication title:
Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
Title of ser.:
Materials science forum
Ser. no.:
258-263
Pub. date:
1997
Vol.:
Part2
Page(from):
1229
Page(to):
1234
Pub. info.:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497881 [0878497889]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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