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On the origin of yellow donor-acceptor pair emission iu GaN

Author(s):
Godlewski,M.
Ivanov,V.Yu.
Kaminska,A.
Zuo,H.Y.
Goldys,E.M.
Tansley,T.L.
Barski,A.
Rossner,U.
Rouvicre,J.L.
Arlery,M.
Grzegory,I.
Suski,T.
Porowski,S.
Bergman,J.P.
9 more
Publication title:
Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
Title of ser.:
Materials science forum
Ser. no.:
258-263
Pub. Year:
1997
Vol.:
Part2
Page(from):
1149
Page(to):
1154
Pub. info.:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497881 [0878497889]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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