Uniaxial-stress symmetry studies on the E1,E2 and E3 irradiatron induced defects in gallium arsenide
- Author(s):
- Publication title:
- Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
- Title of ser.:
- Materials science forum
- Ser. no.:
- 258-263
- Pub. Year:
- 1997
- Vol.:
- Part2
- Page(from):
- 1027
- Page(to):
- 1032
- Pub. info.:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497881 [0878497889]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
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