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Observation of persistent electron capture in n-type gallium arsenide studied by optically detected magnetic resonance

Author(s):
Publication title:
Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
Title of ser.:
Materials science forum
Ser. no.:
258-263
Pub. date:
1997
Vol.:
Part2
Page(from):
1015
Page(to):
1020
Pub. info.:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497881 [0878497889]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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