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Pressure dependent two-dimensional electron transport in defect doped InGaAs/InP heterostructures

Author(s):
Wasik,D.
Dmowski,L.
Mikucki,J.
Lusakowski,J.
Hsu,L.
Walukiewicz,W.
Bi,W.G.
Tu,C.W.
3 more
Publication title:
Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
Title of ser.:
Materials science forum
Ser. no.:
258-263
Pub. Year:
1997
Vol.:
Part2
Page(from):
813
Page(to):
818
Pub. info.:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497881 [0878497889]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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