Thermal activation energies for the three inequivalent lattice sites for the BSi acceptor in 6H-SiC
- Author(s):
Evwaraye,A.O. Smith,S.R. Mitchel,W.C. Hobgood,H.McD. Augustine,G. Balakrishna,V. - Publication title:
- Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
- Title of ser.:
- Materials science forum
- Ser. no.:
- 258-263
- Pub. Year:
- 1997
- Vol.:
- Part2
- Page(from):
- 691
- Page(to):
- 696
- Pub. info.:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497881 [0878497889]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
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