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Thermal activation energies for the three inequivalent lattice sites for the BSi acceptor in 6H-SiC

Author(s):
Evwaraye,A.O.
Smith,S.R.
Mitchel,W.C.
Hobgood,H.McD.
Augustine,G.
Balakrishna,V.
1 more
Publication title:
Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
Title of ser.:
Materials science forum
Ser. no.:
258-263
Pub. date:
1997
Vol.:
Part2
Page(from):
691
Page(to):
696
Pub. info.:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497881 [0878497889]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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