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Electrical properties of Yb.Er doped InP

Author(s):
Seghier,D.
Benyattou,T.
Bremond,G.
Ducroquet,F.
Mar-chand,J.-J.
Guillot,G.
Lhomer,C.
Larnbert,B.
Toudic,Y.
Corre,A.Le.
5 more
Publication title:
Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991
Title of ser.:
Materials science forum
Ser. no.:
83-87
Pub. Year:
1992
Vol.:
Pt.2
Page(from):
677
Page(to):
682
Pub. info.:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496280 [0878496289]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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