A new defect observed in annealed highly phosphorus doped electron-irradiated silicon

A new defect observed in annealed highly phosphorus doped electron-irradiated silicon

Author(s):

Publication title:

Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991

Title of ser.:

Materials science forum

Ser. no.:

83-87

Pub. Year:

1992

Vol.:

Pt.1

Page(from):

333

Page(to):

338

Pub. info.:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496280 [0878496289]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00019283
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Defects in Semiconductors
Conf. info. (Number):	16th
Conf. info. (Venue):	Bethlehem, PA, USA
Conf. info. (Date):	1991.07.22-1991.07.26

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