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Passivation of shallow acceptors in Si and GaAs by annealing in H2

Author(s):
Veloarisoa,I.A.
Kozuch,D.M.
Stavola,M.
Peale,R.E.
Watkins,G.D.
Pearton,S.J.
Abernathy,C.R.
Hobson,W.S.
3 more
Publication title:
Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991
Title of ser.:
Materials science forum
Ser. no.:
83-87
Pub. date:
1992
Vol.:
Pt.1
Page(from):
111
Page(to):
118
Pub. info.:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496280 [0878496289]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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