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Optical properties of InGaN grown by MOCVD on sapphire and on bulk GaN

Author(s):
Osinski,M. ( Ctr.for High Technology Materials/Univ.of New Mexico )
Eliseev,P.G.
Lee,J.
Smagley,V.A.
Sugahara,T.
Sakai,S.
1 more
Publication title:
Design, fabrication, and characterization of photonic devices : 30 November-3 December 1999, Singapore
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3896
Pub. Year:
1999
Page(from):
86
Page(to):
97
Pub. info.:
Bellingham, Wash., USA: SPIE - The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819434982 [0819434981]
Language:
English
Call no.:
P63600/3896
Type:
Conference Proceedings

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