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Activation characteristics of donor and acceptor implants in GaN

Author(s):
Cao, X. A.
Pearton, S. J.
Singh, R. K.
Wilson, R. G.
Sekhar, J. A.
Zolper, J. C.
Han, J.
Rieger, D. J.
Shul, R. J.
Guo, H. J.
Pennycook, S. J.
Zavada, J. M.
7 more
Publication title:
Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
572
Pub. date:
1999
Page(from):
513
Pub. info.:
Warrendale, PA: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558994799 [1558994793]
Language:
English
Call no.:
M23500/572
Type:
Conference Proceedings

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