Blank Cover Image

Hydrostatic and uniaxial stress dependence and photo-induced effects on the channel conductance of n-AlGaN/GaN heterostructures grown on sapphire substrates

Author(s):
Fung, A. K.
Cai, C.
Ruden, P. P.
Nathan, M. I.
Chen, M. Y.
McDermott, B. T.
Sullivan, G. J.
Hove, J. M. Van
Boutros, K.
Redwing, J.
Yang, J. W.
Chen, Q.
Khan, M. A.
Schaff, W.
Murphy, M.
10 more
Publication title:
Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
572
Pub. Year:
1999
Page(from):
495
Pub. info.:
Warrendale, PA: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558994799 [1558994793]
Language:
English
Call no.:
M23500/572
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings *AlGaN microwave power HFETs on insulating SiC substrates

Sullivan, G., Gertner, E., Pittman, R., Chen, M., Pierson, R., Higgins, A., Chen, Q., Yang, J-W., Smith, R. P., Perez, …

MRS-Materials Research Society
7 Conference Proceedings InGaN/GaN double heterostructure laser with cleaved facets

Stocker,D., Schubert,E.F., Grieshaber,W., Boutros,K.S., Flynn,J.S., Vaudo,R.P., Phanse,V.M., Redwing,J.M.

SPIE-The International Society for Optical Engineering
2 Conference Proceedings InGaN/GaN double-heterostructure LEDs on HVPE GaN-on-sapphire substrates

Smith,G.M., Boutros,K.S., Szewczuk,J.W., Flynn,J.S., Phanse,V.M., Vaudo,R.P., Redwing,J.M.

SPIE-The International Society for Optical Engineering
8 Conference Proceedings MOVPE Growth of High Electron Mobility AlGaN/GaN Heterostructures

Redwing, J. M., Flynn, J. S., Tischler, M. A., Mitchel, W., Saxler, A.

MRS - Materials Research Society
3 Conference Proceedings Intrinsic Mobility Limits of a Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures

Walukiewicz, W., Hsu, L., Redwing, J. M.

MRS - Materials Research Society
9 Conference Proceedings High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown On Bulk GaN, SiC, and Sapphire Substrates

Knap, W., Borovitskaya, E., Shur, M. S., Gaska, R., Brandt, B., Maude, D., Frayssinet, E., Lorenzini, P., Grandjean, N., …

Materials Research Society
4 Conference Proceedings InGaN Double Heterostructures and DH-LEDs on HVPE GaN-on-Sapphire Substrates

Boutros, K. S., Flynn, J. S., Phanse, V., Vaudo, R. P., Smith, G. M., Redwing, J. M., Tolliver, T. R., Anderson, N. G.

MRS - Materials Research Society
10 Conference Proceedings DC and Microwave Characteristics of High Transconductance AlGaN/GaN Heterostructure Field-Effect Transistors on SiC Substrates

Chen, Q., Yang, J. W., Khan, M. A., Ping, A. T., Adesida, I.

MRS - Materials Research Society
5 Conference Proceedings Low-frequency noise in SiO2/AlGaN/GaN heterostructures on SiC and sapphire substrates

Pala, N., Gaska, R., Shur, M., Yang, J. W., Khan, M. A.

MRS-Materials Research Society
11 Conference Proceedings Electric And Morphology Studies Of Ohmic Contacts On AlGaN/GaN

Tilak, Vinayak, Dimitrov, R., Murphy, M., Green, B., Smart, J., Schaff, W.J., Shealy, J.R., Eastman, L.F.

Materials Research Society
6 Conference Proceedings Hydrostatic Pressure Studies of GaN/AlGaN/GaN Heterostructure Devices with Varying AlGaN Thickness and Composition

Isaiah Steinke, M. Z. Kauser, P. Paul Ruden, Xianfeng Ni, Hadis Morkoc, Kyung-ah Son

Materials Research Society
12 Conference Proceedings The influence of spontaneous and piezoelectric polarization on novel AlGaN/GaN/InGaN device structures

Foutz, B. E., Murphy, M. J., Ambacher, O., Tilak, V., Smart, J. A., Shealy, J. R., Schaff, W. J., Eastman, L. F.

MRS-Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12