Characterization of thick 4H-SiC hot-wall CVD layers

Characterization of thick 4H-SiC hot-wall CVD layers

Author(s):

Paisley, M. J.

Publication title:

Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

572

Pub. Year:

1999

Page(from):

167

Pub. info.:

Warrendale, PA: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558994799 [1558994793]

Language:

English

Call no.:

M23500/572

Type:

Conference Proceedings

Details

TDL ID:	ZA00018972
Series ID:	PA00000011
Conf. info. (Name):	Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 : Symposium
Conf. info. (Number):	1999
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1999.04.05-1999.04.08

Similar Items:

1 Conference Proceedings 5.5-kV Bipolar Diodes From High-Quality CVD 4H-SiC Irvine, K. G., Singh, R., Paisley, M. J., Palmour, J. W., Kordina, O., Carter, C. H., Jr. MRS - Materials Research Society	7 Conference Proceedings Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices Sumakeris, J.J., Das, M., Hobgood, H.McD., Mueller, S.G., Paisley, M.J., Ha, S., Skowronski, M., Palmour, J.W., Carter, … Trans Tech Publications
2 Conference Proceedings Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition Kordina,O., Irvine,K., Sumakeris,J., Kong,H.S., Paisley,M.J., ,C.H.Carter,Jr. Trans Tech Publications	8 Conference Proceedings Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates M. Yazdanfar, H. Pedersen, O. Kordina, E. Janzén Trans Tech Publications
3 Conference Proceedings Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices Sumakeris, J. J., Das, M. K., Ha, S., Hurt, E., Irvine, K., Paisley, M. J., O'Loughlin, M. J., Palmour, J. W., … Trans Tech Publications	9 Conference Proceedings *GROWTH, DOPING, DEVICE DEVELOPMENT AND CHARACTERIZSATION OF CVD BETA-SiC EPILAYERS ON Si (100) AND ALPHA-SiC (0001) Kong, H., Kim, H,. J., Edmond, J. A., Palmour, J.. W., Ryu, J., Carter Jr., C. H., Glass, J. T., Davis, R. F. Materials Research Society
4 Conference Proceedings 2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development Agarwal, A., Ryu, S. -H., Singh, R., Kordina, O., Palmour, J. W. Trans Tech Publications	10 Conference Proceedings Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD Ellison,A., Kimoto,T., Ivanov,I.G., Wahab,Q., Henry,A., Kordina,O., Zhang,J., Hemmingsson,C.G., Gu,C.-Yu., Leys,M.R., … Trans Tech Publications
5 Conference Proceedings High-Temperature Performance of 10 Kilovolts, 200 Amperes (Pulsed) 4H-SiC PiN Rectifiers Singh, R., Irvine, K.G., Richmond, J.T., Palmour, J.W. Trans Tech Publications	11 Conference Proceedings Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices Sumakeris, J.J., Bergman, J.P., Das, M.K., Hallin, C., Hull, B.A., Janzen, E., Lendenmann, H., O'Loughlin, M.J., … Trans Tech Publications
6 Conference Proceedings High-Temperature Performance of 10 Kilovolts, 200 Amperes (Pulsed) 4H-SiC PiN Rectifiers Singh, R., Irvine, K.G., Richmond, J.T., Palmour, J.W. Trans Tech Publications	12 Conference Proceedings Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System Wagner, G., Leitenberger, W., Irmscher, K., Schmid, F., Laube, M., Pensl, G. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12