A formation of SiO2/4H-SiC interface by oxidizing deposited poly-Si and high-temperature hydrogen annealing

A formation of SiO2/4H-SiC interface by oxidizing deposited poly-Si and high-temperature hydrogen annealing

Author(s):

Fukuda, H.

Publication title:

Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

572

Pub. Year:

1999

Page(from):

105

Pub. info.:

Warrendale, PA: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558994799 [1558994793]

Language:

English

Call no.:

M23500/572

Type:

Conference Proceedings

Details

TDL ID:	ZA00018972
Series ID:	PA00000011
Conf. info. (Name):	Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 : Symposium
Conf. info. (Number):	1999
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1999.04.05-1999.04.08

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