Carbon and silicon related surface compounds of palladium ultrathin films on SiC after different annealing temperatures

Carbon and silicon related surface compounds of palladium ultrathin films on SiC after different annealing temperatures

Author(s):

Publication title:

Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

572

Pub. Year:

1999

Page(from):

87

Pub. info.:

Warrendale, PA: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558994799 [1558994793]

Language:

English

Call no.:

M23500/572

Type:

Conference Proceedings

Details

TDL ID:	ZA00018972
Series ID:	PA00000011
Conf. info. (Name):	Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 : Symposium
Conf. info. (Number):	1999
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1999.04.05-1999.04.08

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