Bias-temperature-stress induced mobility improvement in 4H-SiC MOSFETs

Author(s):

• Chatty, K.
• Chow, T. P.
• Gutmann, R. J.
• Arnold, E.
• Alok, D.

Publication title:

Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

572

Pub. Year:

1999

Page(from):

63

Pub. info.:

Warrendale, PA: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558994799 [1558994793]

Language:

English

Call no.:

M23500/572

Type:

Conference Proceedings