Improved Process Window Using Low-Carbon GexSi1-x-yCy Epitaxial Layers

Improved Process Window Using Low-Carbon GexSi1-x-yCy Epitaxial Layers

Author(s):

Publication title:

III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics : symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

535

Pub. Year:

1999

Page(from):

287

Pub. info.:

Warrendale, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994416 [1558994416]

Language:

English

Call no.:

M23500/535

Type:

Conference Proceedings

Details

TDL ID:	ZA00018919
Series ID:	PA00000011
Conf. info. (Name):	Symposium on II-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics
Conf. info. (Number):	1998
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1998.11.30-1998.12.03

Similar Items:

1 Conference Proceedings Carbon Incorporation in Si1-yCy Alloys Grown by Ultrahigh-Vacuum Chemical Vapor Deposition Mocuta, A. C., Greve, D. W. MRS - Materials Research Society	7 Conference Proceedings CHARACTERIZATION OF DOPED GeXSi1-X MULTIPLE QUANTUM WELL STRUCTURES FOR FAR-IR DETECTORS Greve, D.W., Misra, R., Strong, R., Schlesinger, T.E. Materials Research Society
2 Conference Proceedings GROWTH OF EPITAXIAL LAYERS OF GeXSi1-X BY UHV/CVD Racanelli, Marco, Greve, David W. Materials Research Society	8 Conference Proceedings KINETICS OF EPITAXIAL LAYER GROWTH FROM SILANE ON (100) SILICON Greve, D. W. MRS - Materials Research Society
3 Conference Proceedings GROWTH AND CHARACTERIZATION OF GeXSi1-X/Si MULTIPLE QUANTUM WELL STRUCTURES Greve, D. W., Misra, R., Capano, M. A., Schlesinger, T. E. Materials Research Society	9 Conference Proceedings STRAIN-FREE GexSi1-x LAYERS WITH LOW THREADING DISLOCATION DENSITIES GROWN ON Si SUBSTRATES Fitzgerald, E.A., Xie, Y.H., Green, M.L., Brasen, D., Kortan, A.R., Mii, Y.J., Michel, J., Weir, B.E., Feldman, L.C., … Materials Research Society
4 Conference Proceedings COMPARISON OF MESA-ETCHED AND ION-IMPLANTED GeXSi1-X HETEROJUNCTION BIPOLAR TRANSISTORS Greve, D. W., Racanelli, M. Materials Research Society	10 Conference Proceedings Optical Transitions in Strained Si1-yCy and S1-x-yGexCy Layers Osten, H. J., Kissinger, W., Weidner, M., Eichler, M. MRS - Materials Research Society
5 Conference Proceedings Synthesis of high-quality Si1-yCy and Si1-x-yGexCy epitaxial layers on (100)Si by ion implantation and pulsed excimer laser crystallization Grob,J.-J., Fogarassy,E., Grob,A., Muller,D., Prevot,B., Stuck,R., de Unamuno,S., Boher,P., Stehle,M.X. SPIE-The International Society for Optical Engineering	11 Conference Proceedings Surface activity of magnesium during GaN molecular beam epitaxial growth Ramachandran, V., Feenstra, R. M., Northrup, J. E., Greve, D. W. MRS-Materials Research Society
6 Conference Proceedings GexSi1-x Heterojunction Internal Photoemission Structures by Ultra High Vacuum Chemical Vapor Deposition Strong, R., Greve, D. W., Schlesinger, T. E., Weeks, M. M., Pellegrini, P. W. MRS - Materials Research Society	12 Conference Proceedings Process window monitoring: an emerging requirement for efficient low-k1 lithography Chiua, S.S., Chu, Y.C., Hsieh, J.C., Mo, W.P., Wu, C.M., Teng, T., Slessor, M.D. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12