Metal Contact on Nitride-Based Materials

Metal Contact on Nitride-Based Materials

Author(s):

Ren, F.

Publication title:

Advanced interconnects and contact materials and processes for future integrated circuits : symposium held April 13-16, 1998, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

514

Pub. Year:

1998

Page(from):

451

Pub. info.:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994201 [1558994203]

Language:

English

Call no.:

M23500/514

Type:

Conference Proceedings

Details

TDL ID:	ZA00018917
Series ID:	PA00000011
Conf. info. (Name):	Symposium on advanced interconnects and contact materials and processes for future integrated circuits
Conf. info. (Number):	1998
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1998.04.13-1998.04.16

Similar Items:

1 Conference Proceedings Behavior of W and WSix Contact Metallization on n- and P-Type GaN Cao, X. A., Ren, F., Lothian, J. R., Pearton, S. J., Abernathy, C. R., Zolper, J. C., Cole, M. W., Zeitouny, A., … MRS - Materials Research Society	7 Conference Proceedings GaN Metal Oxide Semiconductor Field Effect Transistors Ren, F., Pearton, S.J., Abernathy, C.R., Baca, A.G., Cheng, P., Han, J., Shul, R.J., Chu, S.N.G., Hong, M., Lothian, … Electrochemical Society
2 Conference Proceedings Ohmic contacts on binary and ternary nitrides Ren, F., Pearton, S.J., Donovan, S., Abernathy, C.R., Cole, M.W. Electrochemical Society	8 Conference Proceedings Rapid Thermal Processing of III-Nitrides Hong, J., Lee, J. W., Vartuli, C. B., MacKenzie, J. D., Donovan, S. M., Abernathy, C. R., Crockett, R. V., Pearton, S. … MRS - Materials Research Society
3 Conference Proceedings *Temperature Effect of Metal contacts on GaN Ren, F., Chu, S.N.G., Lothian, J.R., Pearton, S.J., Abernathy, C.R., Baca, A.G., Han, J., Schurman, M.J., Hong, M., Cao, … Electrochemical Society	9 Conference Proceedings TRI-LAYER LIFT-OFF METALLIZATION PROCESS USING LOW TEMPERATURE DEPOSITED SiNx Lothian, J.R., Ren, F., Pearton, S.J., Chakrabarti, U.K., Abernathy, C.R., Katz, A. Materials Research Society
4 Conference Proceedings *SELF-ALIGNED, METAL-MASKED DRY ETCH PROCESSING OF III-V ELECTRONIC AND PHOTONIC DEVICES Pearton, S. J., Katz, A., Feingold A, Ren, F., Fullowan, T. R., Lothian, J. R, Abernathy, C. R. Materials Research Society	10 Conference Proceedings Reliability of implant-isolation regions in highly-doped GaAs-based structures Ren, F., Pearton, S. J., Lothian, J. R., Fullowan, T. R., Abernathy, C. R., Chu, S. N. G. MRS - Materials Research Society
5 Conference Proceedings HIGH DENSITY MAGNETICALLY CONFINED DRY ETCHING OF METALLIZATION AND DIELECTRICS IN GaAs DEVICE TECHNOLOGY Pearton, S. J., Abernathy, C. R., Ren, F., Lothian, J. R., Kopf, R. P., Katz, A. MRS - Materials Research Society	11 Conference Proceedings The use of amorphous SiO and SiO2 to passivate AuGe based ohmic contact for GaAs ICs LaRoche, J.R., Ren, F., Lothian, J.R., Hong, J., Lambers, E., Pearton, S.J. Electrochemical Society
6 Conference Proceedings InN-Based Ohmic Contacts to AlInN Donovan, S. M., Ren, F., MacKenzie, J. D., Abernathy, C. R., Pearton, S. J., Jones, K. MRS - Materials Research Society	12 Conference Proceedings Low temperature SiNx as a sacrificial layer in novel device fabrication Lothian, J. R., Ren, F., Pearton, S. J., Abernathy, C. R., Tseng, B., Hobson, W. S. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12