Effect of Lateral Dimension Scaling on Thermal Stability of Thin CoSi2 Layers on Polysilicon Implanted With Si

Effect of Lateral Dimension Scaling on Thermal Stability of Thin CoSi2 Layers on Polysilicon Implanted With Si

Author(s):

Publication title:

Advanced interconnects and contact materials and processes for future integrated circuits : symposium held April 13-16, 1998, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

514

Pub. Year:

1998

Page(from):

381

Pub. info.:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994201 [1558994203]

Language:

English

Call no.:

M23500/514

Type:

Conference Proceedings

Details

TDL ID:	ZA00018917
Series ID:	PA00000011
Conf. info. (Name):	Symposium on advanced interconnects and contact materials and processes for future integrated circuits
Conf. info. (Number):	1998
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1998.04.13-1998.04.16

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