Characterization of Vacancy-Type Defects in Ion Implanted and Annealed SiC by Positron Annihilation Spectroscopy

Characterization of Vacancy-Type Defects in Ion Implanted and Annealed SiC by Positron Annihilation Spectroscopy

Author(s):

Publication title:

Atomistic mechanisms in beam synthesis and irradiation of materials : symposium held December 1-2, 1997, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

504

Pub. Year:

1999

Page(from):

135

Pub. info.:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994096 [1558994092]

Language:

English

Call no.:

M23500/504

Type:

Conference Proceedings

Details

TDL ID:	ZA00018916
Series ID:	PA00000011
Conf. info. (Name):	Symposium on atomistic mechanisms in beam synthesis and irradiation of materials
Conf. info. (Number):	1997
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1997.12.01-1997.12.02

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