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Monolithic 1.55 ヲフm Surface-Emitting Laser Structure With In0.53Al0.14 Ga0.33As/In0.52Al0.48As Distributed Bragg Reflector and Single Cavity Active Layer Grown by Metalorganic-Chemical-Vapor-Deposition Method

Author(s):
Baek, J-H.
Lee, B.
Han, W. S.
Smith, J. M.
Jeong, B. S.
Lee, E-H.
1 more
Publication title:
Infrared applications of semiconductors II : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
484
Pub. date:
1998
Page(from):
649
Pub. info.:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993891 [1558993894]
Language:
English
Call no.:
M23500/484
Type:
Conference Proceedings

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