Theory of Critical Layer Thickness of Nonconstant Quantum-Well Width Produced by Interdiffusion and Its Optoelectronics Consequence

Theory of Critical Layer Thickness of Nonconstant Quantum-Well Width Produced by Interdiffusion and Its Optoelectronics Consequence

Author(s):

Publication title:

Infrared applications of semiconductors II : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

484

Pub. Year:

1998

Page(from):

425

Pub. info.:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993891 [1558993894]

Language:

English

Call no.:

M23500/484

Type:

Conference Proceedings

Details

TDL ID:	ZA00018914
Series ID:	PA00000011
Conf. info. (Name):	Symposium on infrared applications of semiconductors
Conf. info. (Number):	2nd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1997.12.01-1997.12.04

Similar Items:

1 Conference Proceedings Analysis of Three Types of Interdiffusion Process in InGaAs/InP Quantum Well and Their Device Implications Chan, Michael C. Y., Chan, K. S., Li, E. Herbert MRS - Materials Research Society	7 Conference Proceedings Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well Chan, M. C. Y., Tsang, K-O., Li, E. H., DenBaars, S. P. MRS - Materials Research Society
2 Conference Proceedings Effect of Interdiffusion on the Subbands in an In0.65Gs0.35As/GaAs Multiple-Quantum Well Structure on GaAs Substrate at 1.55ｦﾌm Operation Wavelength Chan, M. C. Y., Li, E. Herbert, Chan, K. S. MRS - Materials Research Society	8 Conference Proceedings ACCURATE MODELING OF THE SUBBAND AND OPTICAL PROPERTIES OF COMPRESSIVE STRAINED QUANTUM WELLS Li, E. Herbert, Chan, K. S., Weiss, Bernard L. MRS - Materials Research Society
3 Conference Proceedings Multiple Cations Interdiffusion in In0.53Ga0.47As/In0.52Al0.48As Quantum Well Chan, Y., Shiu, W. C., Tsui, W. K., Li, E. Herbert MRS - Materials Research Society	9 Conference Proceedings Wide spectral width superluminescent diodes fabricated by quantum well intermixing Lam, Y.-L., Ong, T.-K., Yin, M., Yu, Z., Chan, Y.-C. SPIE-The International Society for Optical Engineering
4 Conference Proceedings Ion Implantation Induced Interdiffusion in Quantum Wells for Optoelectronic Device Integration Fu, L., Tan, H.H., Cohen, M.I., Jagadish, C., Dao, L.V., Gal, M., Li, Na, Li, Ning, Liu, X., Lu, W., Shen, S.C. Materials Research Society	10 Conference Proceedings Diffused Quantum-Well Structures: Advances in Materials and Device Realizations Li, E. Herbert MRS - Materials Research Society
5 Conference Proceedings Interdiffusion effect on the gain of InGaAs/InP quantum well laser Chan,M.C.Y., Chan,K.S., Li,E.H. SPIE-The International Society for Optical Engineering	11 Conference Proceedings The Effect of Tensile Strain on AlGaAs/GaAsP Interdiffused Quantum-Well Laser Chan, K. S., Chan, Michael C. Y. MRS - Materials Research Society
6 Conference Proceedings *VACANCY PROMOTED INTERDIFFUSION IN QUANTUM WELLS AND APPLICATIONS TO OPTOELECTRONIC DEVICES Ghisoni, M., Rivers, A. W., Lee, K.,, Parry, G., Zhang, X., Staton-Bevan, A., Pate, M., Hill, G., Button, C., Roberts, … Materials Research Society	12 Conference Proceedings Quantum Well Intermixing:Technology and Device Physics Li,E.Herbert SPIE - The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12