Blank Cover Image

Generation and Suppression of Stacking Faults in GaP Layers Grown on Si(100) Substrates by Molecular-Beam Epitaxy and Migration-Enhanced Epitaxy

Author(s):
Publication title:
Thin films - structure and morphology : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
441
Pub. Year:
1997
Page(from):
157
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993457 [1558993452]
Language:
English
Call no.:
M23500/441
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Molecular Beam Epitaxy of InGap Films Grown on Si(001) Substrates with Various Kinds of Initial Buffer Layers

Kawanami, H., Sekigawa, T.

MRS - Materials Research Society
7 Conference Proceedings GROWTH AND CHARACTERIZATION OF InXGa1-XP (x-0.38) ON GaP(100) WITH A LINEARLY GRADED BUFFER LAYER BY GAS-SOURCE MOLECULAR BEAM EPITAXY

Chin, T.P., Chang, J.C.P., Kavanagh, K.L., Tu, C.W., Kirchner, P.D., Woodall, J.M.

Materials Research Society
2 Conference Proceedings Growth of p-Type SiC Layer by Sublimation Epitaxy

Ohta, S., Furusho, T., Takagi, H., Ohshima, S., Nisino, S.

Trans Tech Publications
8 Conference Proceedings Characterization of In doped CdTe grown by molecular beam epitaxy

Kang, T.W., Leem, J.H., Hou, Y.B., Ryu, Y.S., Lee, H.Y., Jeon, H.C., Hyun, J.K., Kang, C.K., Kim, T.W.

SPIE
3 Conference Proceedings InP LAYERS GROWN BY MOLECULAR BEAM EPITAXY AT LOW SUBSTRATE TEMPERATURE

Xie, K., Wie, C.R., Wicks, G.W.

Materials Research Society
9 Conference Proceedings Anisotropic Lattice Relaxation and its Mechanism of ZnSe Epilayer Grown on (001) GaAs Substrate by Molecular Beam Epitaxy

Kim, C. S., Noh, S. K., Lee, H. J., Cho, Y. K., Kim, Y. I., Park, H. S., Kim, T. I.

MRS - Materials Research Society
4 Conference Proceedings Pronounced Auger suppression in long wavelength HgCdTe devices grown by molecular beam epitaxy

P. S. Wijewarnasuriya, G. Brill, Y. Chen, N. K. Dhar, C. Grein, S. Velicu, P. Y. Emelie, H. Jung, S. Sivanathan, A. …

SPIE - The International Society of Optical Engineering
10 Conference Proceedings Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers

Izumi, S., Tsuchida, H., Tawara, T., Kamata, I., Izumi, K.

Trans Tech Publications
5 Conference Proceedings ELECTRICAL PROPERTIES OF HEAVILY Be-DOED GaAs GROWN BY MOLECULAR BEAM EPITAXY

Shibata, H., Makita, Y., Yamada, A., Ohnishi, N., Mori, M., Nakayama, Y., Beye, A.C., Mayer, K.M., Takahashi, T., …

Materials Research Society
11 Conference Proceedings COMPARISON OF THE GaAs LAYERS GROWN ON POROUS Si AND ON Si BY MOLECULAR BEAM EPITAXY

Wu, B. J., Wang,, K. L., Mii, Y. J,, Yoon, Y. S., Wu,. A. T., George,T.,, Weber, E.

Materials Research Society
6 Conference Proceedings A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

Kimura, Ryuhei, Takahashi, Kiyoshi, Grahn, H. T.

Materials Research Society
12 Conference Proceedings Strain Relaxation in(CdMg)Te Layers Grown by Molecular Beam Epitaxy

Heinke,H., Fischer,F., Waag,A., Litz,T., Korn,M., Landwehr,G.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12