The Effect of Growth Temperature on Atomic Ordering in Ga0.52In0.48P Epilayers Grown on GaAs(001) Substrates by GS-MBE

The Effect of Growth Temperature on Atomic Ordering in Ga0.52In0.48P Epilayers Grown on GaAs(001) Substrates by GS-MBE

Author(s):

Meenakarn, C.

Publication title:

Thin films - structure and morphology : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

441

Pub. Year:

1997

Page(from):

21

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993457 [1558993452]

Language:

English

Call no.:

M23500/441

Type:

Conference Proceedings

Details

TDL ID:	ZA00018910
Series ID:	PA00000011
Conf. info. (Name):	Symposium on thin films
Conf. info. (Number):	1996
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1996.12.02-1996.12.06

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