Electron Cyclotron Resonance Etching of SiC in SF6/O2 and NF3/O2 Plasmas

Electron Cyclotron Resonance Etching of SiC in SF6/O2 and NF3/O2 Plasmas

Author(s):

Ren, F.

Publication title:

Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

421

Pub. Year:

1996

Page(from):

251

Pub. info.:

Pittsburgh, Penn: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993242 [155899324X]

Language:

English

Call no.:

M23500/421

Type:

Conference Proceedings

Details

TDL ID:	ZA00018908
Series ID:	PA00000011
Conf. info. (Name):	Symposium on compound semiconductor electronics and photonics
Conf. info. (Number):	1996
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1996.04.08-1996.04.10

Similar Items:

1 Conference Proceedings Profile and Morphology Control During Etching of SiC Using Electron Cyclotron Resonant (ECR) Plasmas Flemish, J.R. Electrochemical Society	7 Conference Proceedings GROWTH OF GaN, AIN AND InN BY ELECTRON CYCLOTRON RESONANCE-METAL ORGANIC MOLECULAR BEAM EPITAXY Wisk, P.W., Abernathy, C.R., Pearton, S.J., Ren, F., Lothian, J.R., Katz, A., Jones, K. Materials Research Society
2 Conference Proceedings ELECTRON CYCLOTRON RESONANCE PLASMA PROCESSING OF GaAs-AlGaAs HEMT STRUCTURES Pearton, S. J., Ren, F., Lothian, J. R., Fullowan, T. R., Kopf, R. F., Chakrabati, U. K., Hui, S. P., Emerson, A. B., … Materials Research Society	8 Conference Proceedings Damage Investigation of GaAs and InGaP Dry Etched with an Electron Cyclotron Resonance Source Cole, M.W., Han, W.Y., Pfeffer, R.L., Eckart, D.W., Pang, S.W., Ko, K.K., Ren, F., Hobson, W.S., Lothian, J.R., Lopata, … Electrochemical Society
3 Conference Proceedings Plasma Damage Effects in InAlN Field-Effect Transistors Ren, F., Lothian, J. R., Chen, Y. K., MacKenzie, J. D., Donovan, S. M., Abernathy, C. R., Vartuli, C. B., Lee, J. W., … MRS - Materials Research Society	9 Conference Proceedings Dry Etch Damage in InN, InGaN and InAlN Pearton, S. J., Lee, J. W., MacKenzie, J. D., Vartuli, C. B., Donovan, S. M., Abernathy, C. R., Shul, R. J., Ren, F., … MRS - Materials Research Society
4 Conference Proceedings Damage Introduction in InGaP and AlGaAs by Electron Cyclotron Resonance Ar Plasmas Lee, J. W., Pearton, S. J., Stradtmann, R. R., Abernathy, C. R., Hobson, W. S., Ren, F. MRS - Materials Research Society	10 Conference Proceedings Extremely High Etching Rate of In-Based III-V Semiconductors in BCl3/N2 Based Plasma Ren, F., Pearton, S.J., Hobson, W.S., Lothian, J.R., Lopata, J., Cole, M.W., Caballero, J.A. Electrochemical Society
5 Conference Proceedings Plasma Chemistries for Dry Etching GaN, AlN, InGaN and InAlN Pearton, S. J., Vartuli, C. B., Lee, J. W., Donovan, S. M., MacKenzie, J. D., Abernathy, C. R., Shul, R. J., McLane, G. … MRS - Materials Research Society	11 Conference Proceedings SILICON NITRIDE DEPOSITED AT VERY LOW SILANE PRESSURES USING ELECTRON CYCLOTRON RESONANCE PLASMAS Flemish, J.R., Pfeffer, R., Buchwald, W., Jones, K.A. Materials Research Society
6 Conference Proceedings Electron Cyclotron Resonance Chemical Vapor Deposited Silicon Nitride for T-gate Passivation Ren, F., LaRoche, J., Anderson, T., Pearton, S.J., Lee, J.W., Johnson, D., Lothian, J.R., Lin, J., Weiner, J.S., Shul, … Electrochemical Society	12 Technical Paper Plasma Properties in the Magnetic Nozzle of an Electron Cyclotron Resonance Plasma Source J. Rovey, R. Stubbers, B. Jurczyk, M. Williams, F. Manley, D. Ruzic American Institute of Aeronautics and Astronautics

1

2

3

4

5

6

7

8

9

10

11

12