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Low Interface State Density Oxide-GaAs Structures Fabricated by In-Situ Molecular Beam Epitaxy

Author(s):
Publication title:
Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
421
Pub. Year:
1996
Page(from):
81
Pub. info.:
Pittsburgh, Penn: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993242 [155899324X]
Language:
English
Call no.:
M23500/421
Type:
Conference Proceedings

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