THE Ge/Pd/n-GaAs OHMIC CONTACT INTERFACE STUDIED BY BACKSIDE RAMAN SPECTROSCOPY

THE Ge/Pd/n-GaAs OHMIC CONTACT INTERFACE STUDIED BY BACKSIDE RAMAN SPECTROSCOPY

Author(s):

Watte, J.

Publication title:

Advanced metallization for devices and circuits--science, technology, and manufacturability : symposium held April 4-8, 1994, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

337

Pub. Year:

1994

Page(from):

331

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992375 [1558992375]

Language:

English

Call no.:

M23500/337

Type:

Conference Proceedings

Details

TDL ID:	ZA00018902
Series ID:	PA00000011
Conf. info. (Name):	Symposium on advanced metallization for devices and circuits-science, technology and manufacturability
Conf. info. (Number):	1994
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1994.04.04-1994.04.08

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