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The role of non-radiative defects in thermal quenching of luminescence in SiGe/Si structures grown by molecular beam epitaxy

Author(s):
Buyanova,I.A.
Chen,W.M.
Pozina,G.
Monemar,B.
Ni,W.X.
Hansson,G.V.
1 more
Publication title:
Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
Title of ser.:
Materials science forum
Ser. no.:
258-263
Pub. Year:
1997
Vol.:
Part1
Page(from):
139
Page(to):
144
Pub. info.:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497874 [0878497870]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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